International Journal of Global Advanced Materials & Nanotechnology
2nd World Congress and Expo on Nanotechnology and Material Science April 04-06, 2016 at Dubai, UAE
Conference Proceedings

Oral Formation of metallic states between insulating SnO and SnO2

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  • A. Albar,
  • Z. Wang,
  • H. N. Alshareef,
  • U. Schwingenschlögl
A. Albar
KAUST, Physical Science& Engineering Division, Thuwal23955-6900
Z. Wang
KAUST, Physical Science& Engineering Division, Thuwal23955-6900
H. N. Alshareef
KAUST, Physical Science& Engineering Division, Thuwal23955-6900
U. Schwingenschlögl
The electronic properties of stoichiometric SnO/SnO2 interfaces are investigatedusing density functional theory. Metallic states are demonstrated to be formed betweenthe two insulating oxides, independent of the interface termination. The propertiesof the metallic states are studied and the mechanisms responsible for their creationidentified. Besides the defects that are always present in the experiment, the observedinterface metallicity contributes significantly to the conductivity of mixed phasesamples.
Published January 1, 2018
Copyright (c) 2018 A. Albar

Abstract

The electronic properties of stoichiometric SnO/SnO2 interfaces are investigatedusing density functional theory. Metallicstates are demonstrated to be formed betweenthe two insulating oxides, independent of the interface termination. Thepropertiesof the metallic states are studied and the mechanisms responsible for their creationidentified. Besides the defects thatare always present in the experiment, the observedinterface metallicity contributes significantly to the conductivity of mixedphasesamples.

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