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In this presentation, we discuss recent work in our groupon p-type oxide semiconductors for transparent electronicsapplications. Careful process optimization was first carried out to establish a stable SnO film deposition process, which wassubsequently used to fabricate thin-film transistors, nanowire transistors, CMOS devices, and a nonvolatile memory, all basedon SnO channel layer.A detailed phase stability map for physical vapor deposition of SnO films is constructed, and SnO thinfilms with a Hall mobility as high as 18.71 cm2V-1s-1were deposited. In addition, we have fabricated TFT devices with a linearfield-effect mobility of 6.75 cm2V-1s-1and 5.87 cm2V-1s-1on transparent rigid and translucent flexible substrates, respectively.Ptypetin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance aredemonstrated at 160°C. The nanowire transistors exhibit a field-effect hole mobility of 10.83cm2V-1s-1, which is higher thananyp-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistorsexhibit five times higher mobility, and one order of magnitude lower subthreshold swing. The SnO nanowire transistors showthree times lower threshold voltages (-1 Volt) than the best reported SnO thin film transistors, and fifteen times smaller thanp-type Cu2O nanowire transistors. Recent results from CMOS and hybrid memory devices based on SnO will also be discussed.