Oral Oxide Semiconductors for Transparent Electronics Applications
In this presentation, we discuss recent work in our groupon p-type oxide semiconductors for transparent electronicsapplications. Careful process optimization was first carried out to establish a stable SnO film deposition process, which wassubsequently used to fabricate thin-film transistors, nanowire transistors, CMOS devices, and a nonvolatile memory, all basedon SnO channel layer.A detailed phase stability map for physical vapor deposition of SnO films is constructed, and SnO thinfilms with a Hall mobility as high as 18.71 cm2V-1s-1were deposited. In addition, we have fabricated TFT devices with a linearfield-effect mobility of 6.75 cm2V-1s-1and 5.87 cm2V-1s-1on transparent rigid and translucent flexible substrates, respectively.Ptypetin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance aredemonstrated at 160°C. The nanowire transistors exhibit a field-effect hole mobility of 10.83cm2V-1s-1, which is higher thananyp-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistorsexhibit five times higher mobility, and one order of magnitude lower subthreshold swing. The SnO nanowire transistors showthree times lower threshold voltages (-1 Volt) than the best reported SnO thin film transistors, and fifteen times smaller thanp-type Cu2O nanowire transistors. Recent results from CMOS and hybrid memory devices based on SnO will also be discussed.
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).