Oral Formation of metallic states between insulating SnO and SnO2

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A. Albar Z. Wang H. N. Alshareef U. Schwingenschlögl

Abstract

The electronic properties of stoichiometric SnO/SnO2 interfaces are investigatedusing density functional theory. Metallicstates are demonstrated to be formed betweenthe two insulating oxides, independent of the interface termination. Thepropertiesof the metallic states are studied and the mechanisms responsible for their creationidentified. Besides the defects thatare always present in the experiment, the observedinterface metallicity contributes significantly to the conductivity of mixedphasesamples.

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Conference Proceedings